J309 / J310 / MMBFJ309 / MMBFJ3
10 — N-Channel
RF Amplifier
? 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 2
Electrical Characteristics Ta
= 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤
300
μs, Duty Cycle ≤
2.0%
Symbol
Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV(BR)GSS
Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0 -25 V
IGSS
Gate Reverse Current VGS
= -15V, V
DS = 0
VGS
= -15V, V
DS = 0, Ta
= 125°C
-1.0
-1.0
nA
μA
VGS(off)
Gate-Source Cutoff Voltage VDS
= 10V, I
D
= 1.0nA
309
310
-1.0
-2.0
-4.0
-6.5
V
V
On Characteristics
IDSS
Zero-Gate Voltage Drain
Current*
VDS
= 10V, V
GS
= 0
309
310
12
24
30
60
mA
mA
VGS(f)
Gate-Source Forward Voltage VDS
= 0, I
G
= 1.0mA 1.0 V
Small Signal Characteristics
Re(yis)
Common-Source Input
Conductance
VDS
= 10V, I
D
= 10mA, f = 100MHz
309
310
0.7
0.5
mmhos
mmhos
Re(yos)
Common-Source Output
Conductance
VDS
= 10V, I
D
= 10mA, f = 100MHz 0.25 mmhos
Gpg
Common-Gate Power Gain VDS
= 10V, I
D
= 10mA, f = 100MHz 16 dB
Re(yfs) Common-Source Forward
Transconductance
VDS
= 10V, I
D
= 10mA, f = 100MHz 12 mmhos
Re(yig)
Common-Gate Input
Conductance
VDS
= 10V, I
D
= 10mA, f = 100MHz 12 mmhos
gfs
Common-Source Forward
Transconductance
VDS
= 10V, I
D
= 10mA, f = 1.0kHz
309
10,000
310
8,000
20,000
μmhos
18,000
μmhos
goss
Common-Source Output
Conductance
VDS
= 10V, I
D
= 10mA, f = 1.0kHz 150
μmhos
gfg
Common-Gate Forward
Conductance
VDS
= 10V, I
D
= 10mA, f = 1.0kHz
309
310
13,000
12,000
μmhos
μmhos
gog
Common-Gate Output
Conductance
VDS
= 10V, I
D
= 10mA, f = 1.0kHz
309
310
100
150
μmhos
μmhos
Cdg
Drain-Gate Capacitance VDS
= 0, V
GS
= -10V, f = 1.0MHz 2.0 2.5 pF
Csg
Source-Gate Capacitance VDS
= 0, V
GS
= -10V, f = 1.0MHz 4.1 5.0 pF
NF Noise Figure VDS
= 10V, I
D
= 10mA, f = 450MHz 3.0 dB
en
Equivalent Short-Circuit Input
Noise Voltage
VDS
= 10V, I
D
= 10mA, f = 100Hz 6.0 nV/ Hz
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